Description

MPSU55 NJS 2 Amp 60V PNP Silicon Transistor
SPECIFICATIONS

StatusDiscontinued
Collector Current-Max (IC)2.0 A
ConfigurationSingle
DC Current Gain-Min (hFE)50.0
JESD-609 Codee0
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: X17
MPSU55
POWER BIPOLAR TRANSISTOR
2A I(C)
60V V(BR)CEO
1-ELEMENT
PNP
SILICON
PLASTIC/EPOXY
3 PIN
Datasheet:MPSU55-MPSU56.pdf