MJD50T4G ON Semiconductor Bipolar Transistor NPN BJT 1A 400V DPAK

MJD50T4G ON Semiconductor BIPOLAR TRANSISTOR, NPN, 400V D-PAK, FULL REEL, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:400V, Transition Frequency ft:10MHz, Power Dissipation Pd:15W, DC Collector Current:1A, DC Current Gain hFE:30hFE , RoHS

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Description

MJD50T4G ON Semiconductor Transistor Bipolar (BJT) Transistor NPN 400V 1A 10MHz 1.56W Surface Mount DPAKSpecifications
Product Attribute Attribute Value Search Similar
Manufacturer: ON Semiconductor
Product Category: Bipolar Transistors – BJT
RoHS: Details
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 400 V
Collector- Base Voltage VCBO: 500 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 1 V
Maximum DC Collector Current: 1 A
Gain Bandwidth Product fT: 10 MHz
Maximum Operating Temperature: + 150 C
Series: MJD50
Height: 2.38 mm
Length: 6.73 mm
Packaging: Cut Tape
Packaging: Reel
Width: 6.22 mm
Brand: ON Semiconductor
Continuous Collector Current: 1 A
DC Collector/Base Gain hfe Min: 30
Minimum Operating Temperature: – 65 C
Pd – Power Dissipation: 15 W
Factory Pack Quantity: 2500