Description

MJD122T4G ON Semiconductor Transistors BJT NPN Bipolar (BJT) Transistor NPN 8A 100V Darlington 4MHz Surface Mount DPA RoHS

Specifications
Manufacturer: onsemi
Product Category: Darlington Transistors
Configuration: Single
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 100 V
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 100 V
Maximum DC Collector Current: 8 A
Maximum Collector Cut-off Current: 10 uA
Pd – Power Dissipation: 20 W
Mounting Style: SMD/SMT
Package / Case: TO-252-3 (DPAK)
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
Series: MJD122
Packaging: Reel
Packaging: Cut Tape
Brand: onsemi
Continuous Collector Current: 8 A
DC Collector/Base Gain hfe Min: 100, 1000
Height: 2.38 mm
Length: 6.73 mm
Product Type: Darlington Transistors
Pack Quantity:2500
Subcategory: Transistors
Width: 6.22 mm
Unit Weight: 0.017637 oz
Manufacturer:ON Semiconductor
Datasheet:on-semi/MJD122-D.pdf