International Rectifier IRLR3110ZPBF N-Channel MOSFET Transistor 100V 42A SMD DPAK-3

Description

International Rectifier IRLR3110ZPBF MOSFET Transistor, N Channel, 42 A, 100 V, 14 mohm, 10 V, 2.5 V

The IRLR3110ZPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. This features combines to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications.

Specifically designed for Industrial applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features com- bine to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications.